BSC050N03LSGATMA1

INFINEON  BSC050N03LSGATMA1  晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0042 ohm, 10 V, 2.2 V 新

表面贴装型 N 通道 30 V 18A（Ta），80A（Tc） 2.5W（Ta），50W（Tc） PG-TDSON-8-5

得捷:
MOSFET N-CH 30V 18A/80A TDSON

欧时:
Infineon MOSFET BSC050N03LS G

e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 80 A, 0.0042 ohm, PG-TDSON, 表面安装

艾睿:
Make an effective common source amplifier using this BSC050N03LSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP

Chip1Stop:
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC050N03LSGATMA1  MOSFET Transistor, N Channel, 80 A, 30 V, 4.2 mohm, 10 V, 1 V

罗切斯特:
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP

Win Source:
MOSFET N-CH 30V 80A TDSON-8