AQV414EHAX

AQV Photomos 系列 0.12 A 400 V 50 Ohm 表面贴装 单通道 固态继电器 -DIP-6

* 1 Form B output type * 60V type couples high capacity 0.55A with low on-resistance typ. 1Ω. * Low on-resistance * This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD Double-diffused and Selective Doping method. * Controls low-level analog signals * PhotoMOS feature extremely low closed circuit offset voltage to enable control of low-level analog signals without distortion * High sensitivity and low on resistance * Can control max. 0.55 A load current with 5 mA input current. Low on-resistance of typ. 1Ω AQV412EH * Low-level off-state leakage current of max. 1 μA AQV414E * Reinforced insulation 5,000 V type also available * More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 reinforced insulation.