SSM6P36FE
SSM6P36FE 复合场效应管 -20V -330mA/-0.33A SOT-563/ES6 marking/标记 PX 电源管理开关
最大源漏极电压VdsDrain-Source Voltage| -20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 8V 最大漏极电流IdDrain Current| -330mA/-0.33A 源漏极导通电阻RdsDrain-Source On-State Resistance| 1.31Ω@ VGS = -4.5V, ID = -100mA 开启电压Vgs(th)Gate-Source Threshold Voltage| -0.3~-1.1V 耗散功率PdPower Dissipation| 150mW/0.15W Description & Applications| TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ○ Power Management Switches • 1.5-V drive • Low ON-resistance: Ron = 3.60 Ω max @VGS = -1.5 V Ron = 2.70 Ω max @VGS = -1.8 V Ron = 1.60 Ω max @VGS = -2.8 V Ron = 1.31 Ω max @VGS = -4.5 V 描述与应用| 场效应晶体管硅P沟道MOS类型 ○电源管理开关 •1.5-V驱动器 •低导通电阻:R ON= 3.60Ω(最大值)(@ VGS=-1.5 V) RON= 2.70Ω(最大)(@ VGS=-1.8 V) RON= 1.60Ω(最大)(@ VGS=-2.8 V) RON= 1.31Ω(最大)(@ VGS=-4.5 V)