IXFN230N20T

IXFN 系列 单通道 N 沟道 200 Vds 7.5 mOhm 1090 W 功率 MOSFET - SOT-227B

N-Channel 200V 220A Tc 1090W Tc Chassis Mount SOT-227B

得捷:
MOSFET N-CH 200V 220A SOT227B

艾睿:
Amplify electronic signals and switch between them with the help of Ixys Corporation&s;s IXFN230N20T power MOSFET. Its maximum power dissipation is 1090000 mW. This device is made with gigamos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.

富昌:
Single N-Channel 200 Vds 7.5 mOhm 1090 W Power Mosfet - SOT-227B

Verical:
Trans MOSFET N-CH 200V 220A Automotive 4-Pin SOT-227B

Win Source:
MOSFET N-CH 200V 220A SOT227B / N-Channel 200 V 220A Tc 1090W Tc Chassis Mount SOT-227B