IPB027N10N5ATMA1

晶体管, MOSFET, N沟道, 166 A, 100 V, 0.0024 ohm, 10 V, 3 V

IPB027N10N5, SP001227034

得捷:
MOSFET N-CH 100V 120A D2PAK

欧时:
Infineon MOSFET IPB027N10N5ATMA1

立创商城:
N沟道 100V 120A

贸泽:
MOSFET N-Ch 100V 120A D2PAK-2

e络盟:
晶体管, MOSFET, N沟道, 166 A, 100 V, 0.0024 ohm, 10 V, 3 V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB027N10N5ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 250000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos 5 technology.

安富利:
Trans MOSFET N-CH 100V 120A 3-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3

Verical:
Trans MOSFET N-CH 100V 166A Automotive 3-Pin2+Tab D2PAK T/R