MKP386M447200JT4
VISHAY MKP386M447200JT4 膜电容, MKP386M系列, 0.47 µF, ± 5%, PP聚丙烯, 2 kV
* Reduce EMI by clamping voltage and current ringing * High pulse strength dV/dt up to 2500 V/μs * Low inductance construction low ESL * Low ESR
MKP386M447200JT4 PDF数据文档
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | MKP386M447200JT4 | Vishay Semiconductor 威世 | |
 | MKP3V240G | ON Semiconductor 安森美 | |
 | MKP3V120RLG | ON Semiconductor 安森美 | |
 | MKP3V120G | ON Semiconductor 安森美 | |
 | MKP383322250JKP2T0 | Vishay Semiconductor 威世 | |
 | MKP3V240 | ON Semiconductor 安森美 | |
 | MKP3V240RL | ON Semiconductor 安森美 | |
 | MKP386M550125YT4 | Vishay Semiconductor 威世 | |
 | MKP386M410200JT5 | Vishay Semiconductor 威世 | |
 | MKP386M510200YT4 | Vishay Semiconductor 威世 | |
 | MKP386M530125YT4 | Vishay Semiconductor 威世 |