BUK7K6R8-40E

NXP  BUK7K6R8-40E  双路场效应管, MOSFET, 双N沟道, 40 A, 40 V, 0.0058 ohm, 10 V, 3 V

The is a 40V Dual N-channel MOSFET uses TrenchMOS technology. Suitable for thermal demanding environments, transmission control, motor, lamps, solenoid controls and ultra high performance power switching applications.

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175°C Junction temperature

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AEC-Q101 qualified

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Repetitive avalanche rated

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True standard level gate with VGS th rating of >1V at 175°C