IXBK55N300

Trans IGBT Chip N-CH 3000V 130A 625000mW 3Pin3+Tab TO-264

Minimize the current at your gate with the IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 3000 V. Its maximum power dissipation is 625000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

得捷:
IGBT 3000V 130A 625W TO264

艾睿:
Trans IGBT Chip N-CH 3KV 130A 3-Pin3+Tab TO-264

Chip1Stop:
Trans IGBT Chip N-CH 3KV 130A 3-Pin3+Tab TO-264

Verical:
Trans IGBT Chip N-CH 3000V 130A 625000mW 3-Pin3+Tab TO-264

DeviceMart:
IGBT 3000V 130A 625W TO264