STL26NM60N

STMICROELECTRONICS  STL26NM60N  功率场效应管, MOSFET, N沟道, 19 A, 600 V, 0.16 ohm, 10 V, 4 V

The is a MDmesh™ II N-channel Power MOSFET features ultra low gate charge. This MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics" well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low ON-resistance, which is unmatched among silicon based Power MOSFET, making it especially suitable for applications which require superior power density and outstanding efficiency.

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Low input capacitance and gate charge

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Low gate input resistance