PSMN2R5-60PL

NXP  PSMN2R5-60PL  晶体管, MOSFET, N沟道, 150 A, 60 V, 0.002 ohm, 10 V, 1.7 V

The is a N-channel logic level MOSFET designed using TrenchMOS® technology. The product design and manufacture has been optimized for use in battery operated power tools.

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High efficiency due to low switching and conduction losses

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Robust construction for demanding applications

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Logic level gate

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-55 to 175°C Junction temperature range