2SD1824GSL
NPN硅外延平面型*低频放大特点*高正向电流传输比HFE。*低集电极到发射极饱和电压VCE(SAT)*高发射器基极电压VEBO。
集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 100V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 100V 集电极连续输出电流ICCollector CurrentIC| 50mA 截止频率fTTranstion FrequencyfT| 90MHz 直流电流增益hFEDC Current GainhFE| 600~1200 管压降VCE(sat)Collector-Emitter Saturation Voltage| 50mV 耗散功率PcPower Dissipation| 150mW/0.15W Description & Applications| Silicon NPN epitaxial planer type- .
- low-frequency amplification Features *High foward current transfer ratio hFE. *Low collector to emitter saturation voltage VCEsat *High emitter to base voltage VEBO. 描述与应用| NPN硅外延平面型 *低频放大 特点 *高正向电流传输比HFE。 *低集电极到发射极饱和电压VCE(SAT) *高发射器基极电压VEBO。