BCW66KFE6327HTSA1

Infineon BCW66KFE6327HTSA1 , NPN 晶体管, 800mA, Vce=45 V, HFE:40, 170 MHz, 3引脚 SOT-23封装

通用 NPN ，

得捷:
TRANS NPN 45V 0.8A SOT23

欧时:
Infineon BCW66KFE6327HTSA1 , NPN 晶体管, 800mA, Vce=45 V, HFE:40, 170 MHz, 3引脚 SOT-23封装

贸泽:
双极晶体管 - 双极结型晶体管BJT AF TRANSISTORS

艾睿:
Infineon Technologies brings you the solution to your high-voltage BJT needs with their NPN BCW66KFE6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

Chip1Stop:
Trans GP BJT NPN 45V 0.8A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 45V 0.8A 500mW Automotive 3-Pin SOT-23 T/R