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MMSF3300

SINGLE TMOS POWER MOSFET 30 VOLTS RDSon = 12.5mΩ

WaveFET™ Power Surface Mount Products

HDTMOS Single N-Channel Field Effect Transistor

WaveFET™ devices are an advanced series of power MOSFETs which utilize ’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET™ devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

• Characterized Over a Wide Range of Power Ratings

• Ultralow RDSon Provides Higher Efficiency and Extends Battery Life in Portable Applications

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• IDSS Specified at Elevated Temperature

• Avalanche Energy Specified

• Miniature SO–8 Surface Mount Package — Saves Board Space

MMSF3300 PDF数据文档
图片 型号 厂商 下载
MMSF3300 Motorola 摩托罗拉
MMSF7N03HDR2 ON Semiconductor 安森美
MMSF7P03HDR2 ON Semiconductor 安森美
MMSF7P03HDR2G ON Semiconductor 安森美
MMSF3P02HDR2 ON Semiconductor 安森美
MMSF3P02HDR2SG ON Semiconductor 安森美
MMSF10N03ZR2 ON Semiconductor 安森美
MMSF2P02ER2 ON Semiconductor 安森美
MMSF1310R2 ON Semiconductor 安森美
MMSF4N01HDR2 ON Semiconductor 安森美
MMSF3P02HDR2G ON Semiconductor 安森美