FDR8305N

双N沟道2.5V指定的PowerTrench MOSFET Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description

These N-Channel 2.5V specified MOSFETs are produced using Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

• 4.5 A, 20 V. RDSON= 0.022 Ω @ VGS= 4.5 V

                  RDSON= 0.028 Ω @ VGS= 2.5 V.

• Low gate charge 16.2nC typical.

• Fast switching speed.

•High performance trench technology for extremely low RDSON.

• Small footprint 38% smaller than a standard SO-8;low profile package 1 mm thick; power handling capability similar to SO-8.