AFT20P140-4WGNR3
RF Power Transistor,1880 to 2025MHz, 130W, Typ Gain in dB is 17.6 @ 2025MHz, 28V, LDMOS, SOT1825
Overview
The AFT20P140-4WNR3 and 24 W symmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025 MHz.
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## Features
* Designed for Wide Instantaneous Bandwidth Applications
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
* Designed for Digital Predistortion Error Correction Systems
* RoHS Compliant
* In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.
## Features RF Performance Table
### 2025 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.6 Vdc, Pout = 24 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.- .
- *Frequency** | **Gps
- .
- * | **ηD
- .
- * | **Output PAR
- .
- * | **ACPR
- .
- *
\---|---|---|---|---
1880 MHz| 17.8| 41.7| 7.7| –31.0
1960 MHz| 17.8| 41.7| 7.7| –33.7
2025 MHz| 17.6| 41.2| 7.8| –34.0