IPS70R900P7SAKMA1

晶体管, MOSFET, N沟道, 6 A, 700 V, 0.74 ohm, 10 V, 3 V

Description:

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

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Efficiency and thermals

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Ease-of-use

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EMI behavior

Summary of Features:

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Extremely low FOM R DSon x E oss; lower Q g, E on and E off

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Highly performant technology

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Low switching losses E oss

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Highly efficient

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Excellent thermal behavior

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Allowing high speed switching

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Integrated protection Zener diode

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Optimized V GSth of 3V with very narrow tolerance of ±0.5V

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Finely graduated portfolio

Benefits:

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Cost competitive technology

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Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology

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Further efficiency gain at higher switching speed

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Supporting less magnetic size with lower BOM costs

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High ESD ruggedness up to HBM Class 2 level

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Easy to drive and design-in

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Enabler for smaller form factors and high power density designs

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Excellent choice in selecting the best fitting product