STB8N65M5

STMICROELECTRONICS  STB8N65M5  功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V

N 通道 MDmesh™ M5 系列，STMicroelectronics

MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。

得捷:
MOSFET N-CH 650V 7A D2PAK

欧时:
### N 通道 MDmesh™ M5 系列，STMicroelectronicsMDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。### MOSFET 晶体管，STMicroelectronics

贸泽:
MOSFET MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A

e络盟:
STMICROELECTRONICS  STB8N65M5  功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.56 ohm, 10 V, 4 V

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STB8N65M5 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 70000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with mdmesh v technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 650V 7A 3-Pin2+Tab D2PAK T/R

富昌:
N-Channel 650 V 0.6 Ω 70 W Surface Mount Power Mosfet - D2PAK

Chip1Stop:
Trans MOSFET N-CH 650V 7A 3-Pin2+Tab D2PAK T/R

TME:
Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK

Verical:
Trans MOSFET N-CH Si 650V 7A 3-Pin2+Tab D2PAK T/R

DeviceMart:
MOSFET N-CH 650V 7A D2PAK

Win Source:
MOSFET N-CH 650V 7A D2PAK