ES1BHE3/61T

整流器 RECOMMENDED ALT 78-ES1BHE3_A/H

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power losses

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• AEC-Q101 qualified

得捷:
DIODE GEN PURP 100V 1A DO214AC

贸泽:
整流器 RECOMMENDED ALT 78-ES1BHE3_A/H

艾睿:
Diode Switching 100V 1A Automotive 2-Pin SMA T/R