PTMA080152MV1AUMA1

Trans RF MOSFET N-CH 65V 20Pin DSO EP T/R

Summary of Features:

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Broadband on-chip matching, 50-ohm input and ~10-ohm output

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Typical GSM/EDGE performance at 28 V, 920 to 960 MHz

\- 30 dB gain, 34% efficiency @ 8 W output power, 

\- 1.5% EVM @ 8W, 

\- –61 dBc ACPR @ 400 kHz,

\- –75 dBc ACPR @ 600 kHz

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Typical CW performance, 940 MHz, 28 V:

\- 20 W P OUT at P1dB, 49% efficiency

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Integrated ESD protection. Meets HBM Class 1B minimum, per JESD22-A114F

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Excellent thermal stability, low HCI drift

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Capable of handling 10:1 VSWR @ 28 V, 20 W CW output power

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Pb-Free and RoHS-compliant

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Package: PG-DSO-20-63, surface mount