IXXH100N60B3

Trans IGBT Chip N-CH 600V 220A 830000mW 3Pin3+Tab TO-247AD

This fast-switching IGBT transistor from Ixys Corporation will be perfect in your circuit. Its maximum power dissipation is 830000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

得捷:
IGBT 600V 220A 830W TO247AD

贸泽:
IGBT Transistors XPT IGBT B3-Class 600V/210Amp

艾睿:
This fast-switching IXXH100N60B3 IGBT transistor from Ixys Corporation will be perfect in your circuit. Its maximum power dissipation is 830000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

Verical:
Trans IGBT Chip N-CH 600V 220A 830000mW 3-Pin3+Tab TO-247AD

DeviceMart:
IGBT 600V 210A 830W TO247AD