SIHB24N65E-GE3
VISHAY SIHB24N65E-GE3 功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
The is a 700V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
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- Low figure-of-meritFOM RON x Qg
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- Low input capacitance CISS
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- Reduced switching and conduction losses
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- Ultra low gate charge
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- Avalanche energy rated
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- Halogen-free