SIRA00DP-T1-GE3

VISHAY SIRA00DP-T1-GE3 晶体管, MOSFET, N沟道, 60 A, 30 V, 830 µohm, 10 V, 1.1 V

The is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for synchronous rectification, O-ring, high power density DC-to-DC, VRMs and embedded DC-to-DC applications.

.: 100% Rg tested

.: 100% UIS tested

.: Halogen-free

.: -55 to 150°C Operating temperature range

SIRA00DP-T1-GE3详细参数

SIRA00DP-T1-GE3 PDF数据文档

图片	型号	厂商	下载
	SIRA00DP-T1-GE3	Vishay Semiconductor 威世
	SIRA14DP-T1-GE3	Vishay Semiconductor 威世
	SIRA12DP-T1-GE3	Vishay Semiconductor 威世
	SIRA34DP-T1-GE3	Vishay Semiconductor 威世
	SIRA18DP-T1-GE3	Vishay Semiconductor 威世
	SIRA06DP-T1-GE3	Vishay Semiconductor 威世
	SIRA10DP-T1-GE3	Vishay Semiconductor 威世
	SIRA04DP-T1-GE3	Vishay Semiconductor 威世
	SIRA02DP-T1-GE3	Vishay Semiconductor 威世
	SIRA36DP-T1-GE3	Vishay Semiconductor 威世
	SIRA52DP-T1-GE3	Vishay Siliconix