IPD65R600C6BTMA1

DPAK N-CH 700V 7.3A

表面贴装型 N 通道 7.3A（Tc） 63W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 650V 7.3A TO252-3

艾睿:
As an alternative to traditional transistors, the IPD65R600C6BTMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 63000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 700V 7.3A 3-Pin2+Tab TO-252

TME:
Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3

Verical:
Trans MOSFET N-CH 650V 7.3A 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 650V 7.3A TO252