BSB044N08NN3GXUMA1

INFINEON  BSB044N08NN3GXUMA1  晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0037 ohm, 10 V, 2.8 V

表面贴装型 N 通道 18A（Ta），90A（Tc） 2.2W（Ta），78W（Tc） MG-WDSON-2，CanPAK M™

得捷:
MOSFET N-CH 80V 18A/90A 2WDSON

艾睿:
Increase the current or voltage in your circuit with this BSB044N08NN3GXUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
OptiMOS™ is the market leader in highly efficient solutions for power generation e.g. solar micro inverter, power supply e.g. server and telecom and power consumption e.g. electric vehicle.

TME:
Transistor: N-MOSFET; unipolar; 80V; 68A; 78W

Verical:
Trans MOSFET N-CH Si 80V 18A Automotive 7-Pin WDSON T/R

Newark:
# INFINEON  BSB044N08NN3GXUMA1  MOSFET Transistor, N Channel, 90 A, 80 V, 0.0037 ohm, 10 V, 2.8 V