SQD50N06-09L-GE3

VISHAY  SQD50N06-09L-GE3  晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 2 V

The is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.

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100% Rg tested

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100% UIS tested

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AEC-Q101 qualified

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Halogen-free

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-55 to 175°C Operating temperature range