JANTX2N3902
数据手册.pdfMicrosemi(美高森美)
分立器件
JANTX Series 400V 3.5A NPN High Power Silicon Transistor - TO-204AA TO-3
This specially engineered NPN GP BJT from comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 5000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V.