JANTX2N5237
数据手册.pdfMicrosemi(美高森美)
分立器件
Trans GP BJT NPN 120V 10A 3Pin TO-5
This NPN general purpose bipolar junction transistor from is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 10 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 10 V.