IPA60R125C6XKSA1
数据手册.pdfINFINEON IPA60R125C6XKSA1 功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 3 V
CoolMOS™C6/C7 功率 MOSFET
得捷:
MOSFET N-CH 600V 30A TO220-FP
立创商城:
N沟道 600V 30A
欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPA60R125C6XKSA1, 30 A, Vds=650 V, 3引脚 TO-220FP封装
艾睿:
As an alternative to traditional transistors, the IPA60R125C6XKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 34000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Chip1Stop:
Trans MOSFET N-CH 600V 30A 3-Pin3+Tab TO-220FP
TME:
Transistor: N-MOSFET; unipolar; 600V; 30A; 34W; TO220FP
Verical:
Trans MOSFET N-CH 600V 30A 3-Pin3+Tab TO-220FP Tube
Newark:
# INFINEON IPA60R125C6XKSA1 Power MOSFET, N Channel, 30 A, 650 V, 0.11 ohm, 10 V, 3 V