IXDH20N120D1
数据手册.pdf
IXYS Semiconductor
分立器件
IGBT 分立，IXYS ### IGBT 分立元件和模块，IXYS绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。
IGBT 分立，IXYS
得捷:
IGBT 1200V 38A 200W TO247AD
欧时:
IXYS IXDH20N120D1 N沟道 IGBT, Vce=1200 V, 38 A, 3引脚 TO-247AD封装
艾睿:
This powerful and secure IXDH20N120D1 IGBT transistor from Ixys Corporation will make sure your circuit works properly. Its maximum power dissipation is 200000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
TME:
Transistor: IGBT; 1.2kV; 25A; 200W; TO247AD
Verical:
Trans IGBT Chip N-CH 1200V 38A 200000mW 3-Pin3+Tab TO-247AD