IXBT2N250

IGBT 晶体管 DISC IGBT BIMSFT-VERYHIVOLT

Don"t be afraid to step up the amps in your device when using this IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 32000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

得捷:
IGBT 2500V 5A 32W TO268

贸泽:
IGBT 晶体管 DISC IGBT BIMSFT-VERYHIVOLT

艾睿:
Trans IGBT Chip N-CH 2500V 5A 32000mW 3-Pin2+Tab TO-268

DeviceMart:
IGBT 2500V 5A 32W TO268

Win Source:
IGBT 2500V 5A 32W TO268 / IGBT 2500 V 5 A 32 W Surface Mount TO-268AA