IXTA3N100P

N-Channel 1000V 3A 4.8Ω Surface Mount PolarVHV Power Mosfet - TO-263

表面贴装型 N 通道 1000 V 3A（Tc） 125W（Tc） TO-263（IXTA）

得捷:
MOSFET N-CH 1000V 3A TO263

贸泽:
MOSFET 3 Amps 1000V 4.8 Rds

艾睿:
As an alternative to traditional transistors, the IXTA3N100P power MOSFET from Ixys Corporation can be used to both amplify and switch electronic signals. Its maximum power dissipation is 125000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

Verical:
Trans MOSFET N-CH 1KV 3A 3-Pin2+Tab D2PAK