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IXTP6N50D2

IXTP6N50D2

数据手册.pdf
IXYS Semiconductor 分立器件

TO-220AB N-CH 500V

Amplify electronic signals and switch between them with the help of Ixys Corporation"s power MOSFET. Its maximum power dissipation is 300000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


得捷:
MOSFET N-CH 500V 6A TO220AB


艾睿:
Amplify electronic signals and switch between them with the help of Ixys Corporation&s;s IXTP6N50D2 power MOSFET. Its maximum power dissipation is 300000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


Verical:
Trans MOSFET N-CH 500V 3-Pin3+Tab TO-220AB


IXTP6N50D2中文资料参数规格
技术参数

极性 N-CH

耗散功率 300 W

漏源极电压Vds 500 V

上升时间 72 ns

输入电容Ciss 2800pF @25VVds

下降时间 43 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 300W Tc

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

IXTP6N50D2引脚图与封装图
暂无图片
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