通道数 1
漏源极电阻 600 mΩ
极性 N-CH
耗散功率 700 W
阈值电压 5 V
漏源极电压Vds 1000 V
漏源击穿电压 1000 V
连续漏极电流Ids 22A
上升时间 35 ns
输入电容Ciss 7050pF @25VVds
额定功率Max 700 W
下降时间 50 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 700W Tc
安装方式 Through Hole
引脚数 3
封装 TO-264-3
长度 19.96 mm
宽度 5.13 mm
高度 26.16 mm
封装 TO-264-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号 | 制造商 | 描述 | 购买 |
---|---|---|---|
IXTK22N100L | IXYS Semiconductor | N-Channel Power MOSFET, IXYS Linear series N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area FBSOA for increased ruggedness and reliability. ### MOSFET 晶体管,IXYS IXYS 的一系列高级离散电源 MOSFET 设备 | 搜索库存 |
图片 | 型号/品牌/封装 | 代替类型 | 描述 | 替代型号对比 |
---|---|---|---|---|
型号: IXTK22N100L 品牌: IXYS Semiconductor 封装: TO-264-3 N-CH 1000V 22A | 当前型号 | N-Channel Power MOSFET, IXYS Linear seriesN-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area FBSOA for increased ruggedness and reliability.### MOSFET 晶体管,IXYSIXYS 的一系列高级离散电源 MOSFET 设备 | 当前型号 | |
型号: IXTX22N100L 品牌: IXYS Semiconductor 封装: TO-247-3 N-CH 1000V 22A | 完全替代 | N-Channel Power MOSFET, IXYS Linear seriesN-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area FBSOA for increased ruggedness and reliability.### MOSFET 晶体管,IXYSIXYS 的一系列高级离散电源 MOSFET 设备 | IXTK22N100L和IXTX22N100L的区别 | |
型号: IXTN22N100L 品牌: IXYS Semiconductor 封装: SOT-227-4 N-CH 1000V 22A | 功能相似 | N-Channel Power MOSFET, IXYS Linear seriesN-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area FBSOA for increased ruggedness and reliability.### MOSFET 晶体管,IXYSIXYS 的一系列高级离散电源 MOSFET 设备 | IXTK22N100L和IXTN22N100L的区别 |