IXTK22N100L、IXTX22N100L、IXTN22N100L对比区别

高亮显示差异参数

型号 IXTK22N100L IXTX22N100L IXTN22N100L

描述 N-Channel Power MOSFET, IXYS Linear seriesN-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.### MOSFET 晶体管，IXYSIXYS 的一系列高级离散电源 MOSFET 设备N-Channel Power MOSFET, IXYS Linear seriesN-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.### MOSFET 晶体管，IXYSIXYS 的一系列高级离散电源 MOSFET 设备N-Channel Power MOSFET, IXYS Linear seriesN-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.### MOSFET 晶体管，IXYSIXYS 的一系列高级离散电源 MOSFET 设备

数据手册 ---

制造商 IXYS Semiconductor IXYS Semiconductor IXYS Semiconductor

分类 MOS管MOS管MOS管

引脚数 3 3 4

封装 TO-264-3 TO-247-3 SOT-227-4

安装方式 Through Hole Through Hole -

极性 N-CH N-CH N-CH

耗散功率 700 W 700 W 700 W

漏源极电压(Vds) 1000 V 1000 V 1000 V

连续漏极电流(Ids) 22A 22A 22A

上升时间 35 ns 35 ns 35 ns

输入电容(Ciss) 7050pF @25V(Vds) 7050pF @25V(Vds) 7050pF @25V(Vds)

下降时间 50 ns 50 ns 50 ns

工作温度(Max) 150 ℃ 150 ℃ 150 ℃

工作温度(Min) -55 ℃ -55 ℃ -55 ℃

耗散功率(Max) 700W (Tc) 700W (Tc) 700000 mW

通道数 1 - -

漏源极电阻 600 mΩ - -

阈值电压 5 V - -

漏源击穿电压 1000 V - -

额定功率(Max) 700 W 700 W -

长度 19.96 mm 16.13 mm 38.2 mm

宽度 5.13 mm 5.21 mm 25.07 mm

高度 26.16 mm 21.34 mm 9.6 mm

封装 TO-264-3 TO-247-3 SOT-227-4

工作温度 -55℃ ~ 150℃ (TJ) -55℃ ~ 150℃ (TJ) -55℃ ~ 150℃ (TJ)

产品生命周期 Active Active Active

包装方式 Tube Tube Tube

RoHS标准 RoHS Compliant RoHS Compliant RoHS Compliant

含铅标准 Lead Free Lead Free Lead Free