IPD65R380C6ATMA1
数据手册.pdfINFINEON IPD65R380C6ATMA1 功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
The IPD65R380C6 is a 650V CoolMOS™ C6 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junctionSJ principle and pioneered by Technologies. The CoolMOS™ C6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
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- Extremely low losses due to very low figure of merit RDS ON x Qg and EOSS
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- Very high commutation ruggedness
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- Easy to use
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- Better light load efficiency
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- Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
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- Better performance in comparison to previous CoolMOS™ generations
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- More efficient, more compact, lighter and cooler
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- Improved power density
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- Improved reliability
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- General purpose part can be used in both soft and hard switching topologies
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- Improved efficiency in hard switching applications
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- Reduces possible ringing due to PCB layout and package parasitic effects
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.