IPD60R385CPATMA1
数据手册.pdfINFINEON IPD60R385CPATMA1 功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
表面贴装型 N 通道 9A（Tc） 83W（Tc） PG-TO252-3
得捷:
MOSFET N-CH 600V 9A TO252-3
立创商城:
N沟道 600V 9A
贸泽:
MOSFET N-Ch 600V 9A DPAK-2
e络盟:
晶体管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
艾睿:
Compared to traditional transistors, IPD60R385CPATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 83000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology.
安富利:
Trans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R
Verical:
Trans MOSFET N-CH 600V 9A 3-Pin2+Tab DPAK T/R
Newark:
# INFINEON IPD60R385CPATMA1 Power MOSFET, N Channel, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
Win Source:
MOSFET N-CH 600V 9A TO-252