IPD50P04P413ATMA1

INFINEON  IPD50P04P413ATMA1  晶体管, MOSFET, P沟道, -50 A, -40 V, 0.0092 ohm, -10 V, -3 V

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 40V 50A TO252-3

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET IPD50P04P413ATMA1, 50 A, Vds=40 V, 3引脚 DPAK TO-252封装

贸泽:
MOSFET P-Ch -40V -50A DPAK-2 OptiMOS-P2

e络盟:
功率场效应管, MOSFET, P沟道, 40 V, 50 A, 0.0092 ohm, TO-252 DPAK, 表面安装

艾睿:
This IPD50P04P413ATMA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 58000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology.

安富利:
Trans MOSFET P-CH 40V 50A 3-Pin TO-252 T/R

Verical:
Trans MOSFET P-CH 40V 50A Automotive 3-Pin2+Tab DPAK T/R

Newark:
MOSFET Transistor, P Channel, -50 A, -40 V, 0.0092 ohm, -10 V, -3 V