IPD200N15N3GATMA1
数据手册.pdfInfineon(英飞凌)
分立器件
DPAK N-CH 150V 50A
The IPD200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS on of 40% and of 45% in Figure of Merit FOM. The OptiMOS™ MOSFET offers high system efficiency and industry"s lowest RDS on within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
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- Excellent switching performance
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- Environmentally-friendly
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- Increased efficiency
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- Highest power density
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- Less paralleling required
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- Smallest board-space consumption
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- Easy to design