IPI60R190C6

金属氧化物半导体场效应晶体管 Metal Oxide Semiconductor Field Effect Transistor

Description:

CoolMOS™ C6 combines "s experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. 

.

**600V CoolMOS™ C6 is replacement for 600V CoolMOS™ C3**

.

**650V CoolMOS™ C6 is replacement for 650V CoolMOS™ C3**

Summary of Features:

.

Easy control of switching behavior

.

Extremely low losses due to very low Figure of Merit R DSon* Q g and E oss

.

Very high commutation ruggedness

.

Easy to use

.

Better light load efficiency compared to C3

.

Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness

.

Better price performance in comparison to previous CoolMOS™ generations

.

More efficient, more compact, lighter and cooler

Benefits:

.

Improved power density

.

Improved reliability

.

General purpose part can be used in both soft and hard switching topologies

.

Better light load effciency

.

Improved effciency in hard switching applications

.

Improved ease-of-use

.

Reduces possible ringing due to pcb layout and package parasitic effects

Target Applications:

 

.

Consumer

.

Adapter

.

eMobility

.

PFC stages for server & telecom

.

SMPS

.

PC power

.

Solar

.

Lighting