IPP04CN10N G

INFINEON  IPP04CN10N G  晶体管, MOSFET, N沟道, 100 A, 100 V, 3.5 mohm, 10 V, 3 V

The is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS ON and FOM.

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World"s lowest RDS ON

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Very low Qg and Qgd

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Excellent gate charge x RDS ON product FOM

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Environmentally friendly

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Highest power density

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Less paralleling required

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Smallest board-space consumption

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Easy-to-design products

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Halogen-free

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MSL1 rated 2