IDT71V35761YS200PF

128K ×36 ， 256K ×18的3.3V同步SRAM 3.3VI / O ，流水线突发输出计数器，单周期取消 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description

The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle.

Features

◆128K x 36, 256K x 18 memory configurations

◆Supports high system speed:

   Commercial:

     – 200MHz 3.1ns clock access time

  Commercial and Industrial:

     – 183MHz 3.3ns clock access time

     – 166MHz 3.5ns clock access time

◆LBOinput selects interleaved or linear burst mode

◆Self-timed write cycle with global write control GW, byte write enable BWE, and byte writes BWx

◆3.3V core power supply

◆Power down controlled by ZZ input

◆3.3V I/O

◆Optional - Boundary Scan JTAG Interface IEEE 1149.1 compliant

◆Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack TQFP, 119 ball grid array BGA and 165 fine pitch ball grid array