IRFZ40PBF

VISHAY  IRFZ40PBF  晶体管, MOSFET, N沟道, 35 A, 60 V, 28 mohm, 10 V

The is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50W.

.

Dynamic dV/dt rating

.

Fast switching

.

Ease of paralleling

.

Simple drive requirements