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ISO722QDRQ1

ISO722QDRQ1

TI(德州仪器) 主动器件

具有使能功能的汽车类单通道 100Mbps 数字隔离器 8-SOIC -40 to 125

The ISO72x-Q1 is a digital isolator with a logic input and output buffer separated by a silicon oxide SiO2 insulation barrier. This barrier provides galvanic isolation of up to 4000 V. Used in conjunction with isolated power supplies, this device prevents noise currents on a data bus or other circuits from entering the local ground and interfering with or damaging sensitive circuitry.

The capacitive isolation barrier conditions, translates to a balanced signal, then differentiates a binary input signal. Across the isolation barrier, a differential comparator receives the logic-transition information, then sets or resets a flip-flop and the output circuit accordingly. A periodic update pulse sent across the barrier ensures the proper dc level of the output. On failure to receive this dc refresh pulse for more than 4 µs, the response of the device is as if the input is or not actively driven, and the failsafe circuit drives the output to a logic-high state.

The symmetry of the dielectric and capacitor within the integrated circuitry provides for close capacitive matching and allows fast transient voltage changes between the input and output grounds without corrupting the output. The small capacitance and resulting time constant provide for fast operation with signaling rates1 from 0 Mbps dc to 100 Mbps.

The device requires two supply voltages of 3.3 V, 5 V, or any combination. All inputs are 5-V tolerant when supplied from a 3.3-V supply, and all outputs are 4-mA CMOS. The device has a TTL input threshold and a noise filter at the input that prevents transient pulses of up to 2 ns in duration from being passed to the output of the device.

The ISO722-Q1 device includes an active-low output enable that, when driven to a high logic level, places the output in a high-impedance state and turns off internal bias circuitry to conserve power.

The ISO72x-Q1 is characterized for operation over the ambient temperature range of –40°C to 125°C.

ISO722QDRQ1中文资料参数规格
技术参数

电源电压DC 3.30 V, 5.00 V

上升/下降时间 1 ns

通道数 1

耗散功率 159 mW

数据速率 100 Mbps

隔离电压 4000 Vpk

过温保护 No

下降时间Max 2 ns

上升时间Max 2 ns

工作温度Max 125 ℃

工作温度Min -40 ℃

耗散功率Max 159 mW

电源电压 3V ~ 5.5V

封装参数

安装方式 Surface Mount

引脚数 8

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -40℃ ~ 125℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

ISO722QDRQ1引脚图与封装图
ISO722QDRQ1引脚图

ISO722QDRQ1引脚图

ISO722QDRQ1封装图

ISO722QDRQ1封装图

ISO722QDRQ1封装焊盘图

ISO722QDRQ1封装焊盘图

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