IDW20G65C5FKSA1
数据手册.pdfInfineon(英飞凌)
分立器件
INFINEON IDW20G65C5FKSA1 二极管, 碳化硅肖特基, SIC, thinQ 5G 650V系列, 单, 650 V, 20 A, 29 nC, TO-247
The IDW20G65C5 is a SiC Schottky Diode features higher safety margin against overvoltage and complements CoolMOS™ offer, reduced EMI compared to snappier Silicon diode reverse recovery waveform. The 5th generation thinQ!™ compact Schottky diode with thin-wafer technology and it is improves efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit Qc x Vf. The new thinQ!™ generation 5 has been designed to complement 650V CoolMOS™ families, this ensures meeting the most stringent application requirements in this voltage range.
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- Revolutionary semiconductor material-silicon carbide
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- Reduced cooling requirements
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- No reverse recovery/no forward recovery
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- Temperature independent switching behaviour
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- High surge current capability
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- Increased efficiency compared to silicon diode alternatives
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- Enabling higher frequency/increased power density solutions
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- Higher system reliability due to lower operating temperatures
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- Reduced EMI
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- Reduced risks of thermal runaway