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IPD85P04P407ATMA1

IPD85P04P407ATMA1

数据手册.pdf
Infineon(英飞凌) 分立器件

晶体管, MOSFET, P沟道, -85 A, -40 V, 0.0073 ohm, -10 V, -3 V

Summary of Features:

.
P-channel - Normal Level - Enhancement mode
.
AEC qualified
.
MSL1 up to 260°C peak reflow
.
175°C operating temperature
.
Green package RoHS compliant
.
100% Avalanche tested

Benefits:

.
No charge pump required for high side drive.
.
Simple interface drive circuit
.
World"s lowest RDSon at 40V
.
Highest current capability
.
Lowest switching and conduction power losses for highest thermal efficiency
.
Robust packages with superior quality and reliability
.
Standard packages TO-252, TO-263, TO-220, TO-262
IPD85P04P407ATMA1中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.0073 Ω

极性 P-CH

耗散功率 88 W

漏源极电压Vds 40 V

连续漏极电流Ids 85A

上升时间 15 ns

输入电容Ciss 4681pF @25VVds

下降时间 39 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 88000 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-252-3

外形尺寸

封装 TO-252-3

物理参数

工作温度 -55℃ ~ 175℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

制造应用 Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump, High-Side MOSFETs for motor bridges half-bridges, H-bridges, 3-phase-motors

符合标准

RoHS标准

含铅标准 无铅

海关信息

ECCN代码 EAR99

IPD85P04P407ATMA1引脚图与封装图
暂无图片
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