IPD80R2K8CEATMA1

晶体管, MOSFET, N沟道, 1.9 A, 800 V, 2.4 ohm, 10 V, 3 V

Summary of Features:

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Low specific on-state resistance R DSon*A

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Very low energy storage in output capacitance E oss @ 400V

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Low gate charge Q g

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Field-proven CoolMOS™ quality

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CoolMOS™ technology has been manufactured by since 1998

Benefits:

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High efficiency and power density

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Outstanding price/performance

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High reliability

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Ease-of-use

Target Applications:

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LED lighting