IS62WV25616BLL-55TI

SRAM Chip Async Single 3.3V 4M-bit 256K x 16 55ns 44Pin TSOP-II

DESCRIPTION

TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

FEATURES

• High-speed access time: 55ns, 70ns

• CMOS low power operation

   36 mW typical operating

   9 µW typical CMOS standby

• TTL compatible interface levels

• Single power supply

   1.65V--2.2V VDD IS62WV25616ALL

   2.5V--3.6V VDD IS62WV25616BLL

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available