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FCMT099N65S3

数据手册.pdf
ON Semiconductor(安森美) 电子元器件分类

FCMT099N65S3 编带

SuperFET III MOSFET is "s brand-new high voltage super-junctionSJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications. The Power88 package is an ultra-slim surface-mount package 1mm high with a low profile and small footprint 8
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8 mm. SuperFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Moisture Sensitivity Level 1MSL 1.

Features |   | Benefits

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700V @ TJ = 150C

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Higher system reliability at low temperature operation
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Kelvin contact

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Lower gate noise and switching loss
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Ulta Low Gate Charge Typ. Qg = 56 nC

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Lower switching loss
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Leadless Ultra-thin SMD package

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Higher power density
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Typ. RDSon = 87mohm

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Moisture Sensitivity Level 1 guarantee

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100% Avalanche Tested

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RoHS Compliant

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FCMT099N65S3中文资料参数规格
技术参数

针脚数 4

漏源极电阻 0.087 Ω

耗散功率 227 W

阈值电压 4.5 V

漏源极电压Vds 650 V

上升时间 20 ns

下降时间 5 ns

工作温度Max 150 ℃

耗散功率Max 227 W

封装参数

引脚数 4

封装 PQFN-4

外形尺寸

封装 PQFN-4

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

制造应用 Computing, Industrial, 计算机硬件, Telecommunication

符合标准

RoHS标准

含铅标准 Lead Free

FCMT099N65S3引脚图与封装图
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