FQD17N08LTF

N沟道 80V 12.9A

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.

Features

• 12.9A, 80V, RDSon= 0.1Ω@VGS= 10 V

• Low gate charge typical 8.8 nC

• Low Crss typical 29 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• Low level gate drive requirements allowing direct operation from logic drives