FDS6930B
数据手册.pdf
Fairchild
飞兆/仙童
分立器件
FAIRCHILD SEMICONDUCTOR FDS6930B. 场效应管, MOSFET, N沟道, 30V
The is a dual N-channel Logic Level MOSFET produced using Semiconductor"s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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- Fast switching speed
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- Low gate charge
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- High performance trench technology for extremely low RDS ON
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- High power and current handling capability
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- -55 to 150°C Junction and storage temperature range